Metastable nanoscale solid solutions and their integration
DACH
Disciplines
Chemistry (75%); Physics, Astronomy (25%)
Keywords
- Nanowire,
- Metastable Composition,
- Heterostructures,
- Interfaces,
- Transport Phenomena
The project targets the controlled formation of nanoscale germanium-based materials with metastable composition to alter and control their physical properties. For this purpose, low temperature growth processes will be adapted and suitable precursors identified allowing to exceed the respective solid solubility in germanium. The adjustment of the metal concentration and altering the n- and p-dopant activity will be in the focus of the material synthesis. In addition, electronic devices will be fabricated based on these metastable nanomaterials and the influence of the formed interfaces with metallic contacts will be evaluated. The manipulation of the interface properties as well as the size of the metastable semiconductor material will be achieved by a thermally induced exchange reaction. Examination of these metal- semiconductor heterostructures fundamental electronic properties will allow to study the fundamental physics and, device structure and the metastable semiconductor material. Since these material combinations are also found in modern quantum computers, new findings could also have impact on the research in this field of applications.
- Technische Universität Wien - 100%
Research Output
- 59 Citations
- 14 Publications
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2025
Title A Schottky barrier field-effect transistor platform with variable Ge content on SOI DOI 10.1016/j.sse.2025.109221 Type Journal Article Author Fuchsberger A Journal Solid-State Electronics Pages 109221 Link Publication -
2025
Title Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers DOI 10.1109/ted.2025.3559912 Type Journal Article Author Fuchsberger A Journal IEEE Transactions on Electron Devices Pages 2868-2873 Link Publication -
2024
Title Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors DOI 10.1109/ted.2024.3485600 Type Journal Article Author Fuchsberger A Journal IEEE Transactions on Electron Devices Pages 7277-7280 Link Publication -
2025
Title Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors DOI 10.1109/ted.2025.3545802 Type Journal Article Author Fuchsberger A Journal IEEE Transactions on Electron Devices Pages 1631-1636 Link Publication -
2025
Title Thermionic injection analysis in germanium nanowire Schottky junction FETs by means of 1D and 3D extraction methods DOI 10.1039/d4na00957f Type Journal Article Author Behrle R Journal Nanoscale Advances Pages 2266-2271 Link Publication -
2025
Title Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms DOI 10.1016/j.sse.2024.109055 Type Journal Article Author Fuchsberger A Journal Solid-State Electronics Pages 109055 Link Publication -
2025
Title Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors DOI 10.1109/led.2025.3577243 Type Journal Article Author Fuchsberger A Journal IEEE Electron Device Letters Pages 1429-1432 Link Publication -
2025
Title Electrostatically Adaptable Current Mirror based on Germanium Field-Effect Transistors DOI 10.1109/iscas56072.2025.11043600 Type Conference Proceeding Abstract Author Fuchsberger A Pages 1-5 -
2025
Title Negative Differential Transconductance Induced by Electrostatic Doping in Multi-Functional Si Field-Effect Transistors DOI 10.1002/admt.202501768 Type Journal Article Author Fuchsberger A Journal Advanced Materials Technologies Link Publication -
2025
Title A Cryogenic Ultra-Thin Body SiGeSn Transistor DOI 10.1109/jeds.2025.3647706 Type Journal Article Author Fuchsberger A Journal IEEE Journal of the Electron Devices Society Pages 24-29 Link Publication -
2022
Title Mixed-Substituted Single-Source Precursors for Si1–x Ge x Thin Film Deposition DOI 10.1021/acs.inorgchem.2c02835 Type Journal Article Author Ko¨Stler B Journal Inorganic Chemistry Pages 17248-17255 Link Publication -
2024
Title A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States DOI 10.1109/jeds.2024.3350209 Type Journal Article Author Fuchsberger A Journal IEEE Journal of the Electron Devices Society Pages 83-87 Link Publication -
2024
Title Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy DOI 10.1021/acsami.3c18674 Type Journal Article Author Behrle R Journal ACS Applied Materials & Interfaces Pages 19350-19358 Link Publication -
2023
Title Electrical and Structural Properties of Si1-xGex Nanowires Prepared from a Single-Source Precursor DOI 10.3390/nano13040627 Type Journal Article Author Behrle R Journal Nanomaterials Pages 627 Link Publication