Uncatalyzed Growth Mechanisms of Silicon Carbide µ-Fibres

The following project investigates, on a scientific-systematic basis, the growth of silicon carbide microfibers, when no metal catalyst is present. Silicon carbide is a semiconductor that can be synthesized by the de-oxidation of silica using carbon at high temperatures, typically above 1500 C. Under certain conditions, this process leads to the formation of silicon carbide microfibers, which are fibers that are typically some micrometer thick and may reach length scales up to several mm. These silicon carbide microfibers are potentially interesting in a broad range of different applications such as in sensors, field emitters, light emitting diodes, photovoltaics, as well as catalysis and batteries. Prior to the potential use of silicon carbide microfibers in real-life applications, however, a large number of questions, regarding its growth mechanism and chemical composition, remains to be answered. Questions such as: How are initial silicon carbide nuclei formed from the gas phase and can nuclei form on a non-carbon surface? How is the growth initiated without a catalyst and which factors determine the fiber diameter and length? How are dopants incorporated into the silicon carbide microfibers and how does this depend on the dopants chemical nature? What are the important chemical reactions involved? All these questions are going to be addressed within the frame of this project. Therefore, this project is able to fill an important knowledge gap in the field of semiconductor physics. It is in its present form, very important to provide the necessary fundamental understanding for silicon carbide microfibers growth, and consequently, their potential applications.